Chemical vapor deposition of TiN films in a batch reactor

Details Chemical vapor deposition of TiN films in a batch reactor Chemical vapor deposition of TiN films in a batch reactor

2006-12-04

2010-06-08

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21160

Reexamination Certificate

active

07732350

ABSTRACT:
Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4is flowed into the reactor in temporally separated pulses. The NH3can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4pulses, or the NH3can be flowed continuously into the reactor while the TiCl4is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.

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