Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Plasma generating
Reexamination Certificate
2005-05-31
2005-05-31
Wong, Don K. (Department: 2821)
Electric lamp and discharge devices: systems
Discharge device load with fluent material supply to the...
Plasma generating
C315S111510, C315S111410, C315S111810, C118S7230IR
Reexamination Certificate
active
06900596
ABSTRACT:
A plasma reactor for processing a semiconductor wafer includes a side wall and an overhead ceiling defining a chamber, a workpiece support cathode within the chamber having a working surface facing the ceiling for supporting a semiconductor workpiece, process gas inlets for introducing a process gas into the chamber and an RF bias power generator having a bias power frequency. There is a bias power feed point at the working surface and an RF conductor is connected between the RF bias power generator and the bias power feed point at the working surface. A dielectric sleeve surrounds a portion of the RF conductor, the sleeve having an axial length along the RF conductor, a dielectric constant and an axial location along the RF conductor, the length, dielectric constant and location of the sleeve being such that the sleeve provides a reactance that enhances plasma ion density uniformity over the working surface. In accordance with a further aspect, the reactor can include an annular RF coupling ring having an inner diameter corresponding generally to a periphery of the workpiece, the RF coupling ring extending a sufficient portion of a distance between the working surface and the overhead electrode to enhance plasma ion density near a periphery of the workpiece.
REFERENCES:
patent: 4464223 (1984-08-01), Gorin
patent: 4579618 (1986-04-01), Celestino et al.
patent: 4859908 (1989-08-01), Yoshida et al.
patent: 4973883 (1990-11-01), Hirose et al.
patent: 4990229 (1991-02-01), Campbell et al.
patent: 5006760 (1991-04-01), Drake, Jr.
patent: 5017835 (1991-05-01), Oechsner
patent: 5032202 (1991-07-01), Tsai et al.
patent: 5055853 (1991-10-01), Garnier
patent: 5077499 (1991-12-01), Oku
patent: 5089083 (1992-02-01), Kojima et al.
patent: 5107170 (1992-04-01), Ishikawa et al.
patent: 5115167 (1992-05-01), Ootera et al.
patent: 5122251 (1992-06-01), Campbell et al.
patent: 5140223 (1992-08-01), Gesche et al.
patent: 5195045 (1993-03-01), Keane et al.
patent: 5198725 (1993-03-01), Chen et al.
patent: 5210466 (1993-05-01), Collins et al.
patent: 5213658 (1993-05-01), Ishida
patent: 5223457 (1993-06-01), Mintz et al.
patent: 5225024 (1993-07-01), Hanley et al.
patent: 5246532 (1993-09-01), Ishida
patent: 5272417 (1993-12-01), Ohmi
patent: 5274306 (1993-12-01), Kaufman et al.
patent: 5279669 (1994-01-01), Lee
patent: 5280219 (1994-01-01), Ghanbari
patent: 5300460 (1994-04-01), Collins et al.
patent: 5312778 (1994-05-01), Collins et al.
patent: 5401351 (1995-03-01), Samukawa
patent: 5453305 (1995-09-01), Lee
patent: 5463525 (1995-10-01), Barnes et al.
patent: 5512130 (1996-04-01), Barna et al.
patent: 5534070 (1996-07-01), Okamura et al.
patent: 5537004 (1996-07-01), Imahashi et al.
patent: 5554223 (1996-09-01), Imahashi
patent: 5567268 (1996-10-01), Kadomura
patent: 5587038 (1996-12-01), Cecchi et al.
patent: 5592055 (1997-01-01), Capacci et al.
patent: 5595627 (1997-01-01), Inazawa et al.
patent: 5605637 (1997-02-01), Shan et al.
patent: 5618382 (1997-04-01), Mintz et al.
patent: 5627435 (1997-05-01), Jansen et al.
patent: 5660671 (1997-08-01), Harada et al.
patent: 5662770 (1997-09-01), Donohoe
patent: 5674321 (1997-10-01), Pu et al.
patent: 5685914 (1997-11-01), Hills et al.
patent: 5705019 (1998-01-01), Yamada et al.
patent: 5707486 (1998-01-01), Collins
patent: 5710486 (1998-01-01), Ye et al.
patent: 5720826 (1998-02-01), Hayashi et al.
patent: 5733511 (1998-03-01), De Francesco
patent: 5792376 (1998-08-01), Kanai et al.
patent: 5846885 (1998-12-01), Kamata et al.
patent: 5849136 (1998-12-01), Mintz et al.
patent: 5849372 (1998-12-01), Annaratone et al.
patent: 5855685 (1999-01-01), Tobe et al.
patent: 5858819 (1999-01-01), Miyasaka
patent: 5863376 (1999-01-01), Wicker et al.
patent: 5904799 (1999-05-01), Donohoe
patent: 5914568 (1999-06-01), Nonaka
patent: 5936481 (1999-08-01), Fujii
patent: 5997962 (1999-12-01), Ogasawara et al.
patent: 6016131 (2000-01-01), Sato et al.
patent: 6043608 (2000-03-01), Samukawa et al.
patent: 6089182 (2000-07-01), Hama
patent: 6093457 (2000-07-01), Okumura et al.
patent: 6096160 (2000-08-01), Kadomura
patent: 6110395 (2000-08-01), Gibson, Jr.
patent: 6113731 (2000-09-01), Shan et al.
patent: 6142096 (2000-11-01), Sakai et al.
patent: 6152071 (2000-11-01), Akiyama et al.
patent: 6155200 (2000-12-01), Horiike et al.
patent: 6162709 (2000-12-01), Raoux et al.
patent: 6188564 (2001-02-01), Hao
patent: 6213050 (2001-04-01), Liu et al.
patent: 6218312 (2001-04-01), Collins et al.
patent: 6245190 (2001-06-01), Masuda et al.
patent: 6251216 (2001-06-01), Okamura et al.
patent: 6262538 (2001-07-01), Keller
patent: 6290806 (2001-09-01), Donohoe
patent: 6337292 (2002-01-01), Kim et al.
patent: 6346915 (2002-02-01), Okumura et al.
patent: RE37580 (2002-03-01), Barnes et al.
patent: 6451703 (2002-09-01), Liu et al.
patent: 6462481 (2002-10-01), Holland et al.
patent: 6528751 (2003-03-01), Hoffman et al.
patent: 2003/0168427 (2003-09-01), Flamm et al.
patent: 0 343 500 (1989-11-01), None
patent: 0 678 903 (1995-10-01), None
patent: 0 719 447 (1998-07-01), None
patent: WO 01/71765 (2001-09-01), None
U.S. Appl. No. 09/527,342, filed Mar. 17, 2000 entitled, “Plasma Reactor with Overhead RF Electrode Tuned to the Plasma,” by Daniel Hoffman, et al.
U.S. Appl. No. 10/007,367, filed Oct. 22, 2001 entitled, “Merie Plasma Reactor with Overhead RF Electrode Tuned to the Plasma with Arcing Suppression,” by Daniel Hoffman, et al.
U.S. Appl. No. 10/028,922, filed Dec. 19, 2001 entitled, “Plasma Reactor with Overhead RF Electrode Tuned to the Plasma with Arcing Suppression,” by Daniel Hoffman, et al.
U.S. Appl. No. 10/694,776, filed Oct. 29, 2003 Hiraoka, et al.
U.S. Appl. No. 10/654,920, filed Sep. 5, 2003, Endo et al.
Buchberger, Jr. Douglas A.
Carducci James D.
Chiang Kang-Lie
Delgadino Gerardo A.
Hagen Melissa
Applied Materials Inc.
Bach Joseph
Vu Jimmy
Wallace Robert M.
Wong Don K.
LandOfFree
Capacitively coupled plasma reactor with uniform radial... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Capacitively coupled plasma reactor with uniform radial..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitively coupled plasma reactor with uniform radial... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3379539