Optics: measuring and testing – By configuration comparison – With photosensitive film or plate
Patent
1993-05-28
1995-09-12
Pham, Hoa Q.
Optics: measuring and testing
By configuration comparison
With photosensitive film or plate
356357, 1566261, G01B 1106, H01L 2100
Patent
active
054502055
ABSTRACT:
A new technique has been developed to measure etching or deposition rate uniformity in situ using a CCD camera which views the wafer during plasma processing. The technique records the temporal modulation of plasma emission or laser illumination reflected from the wafer; this modulation is caused by interferometry as thin films are etched or deposited. The measured etching rates compare very well with those determined by Helium-Neon laser interference. This technique is capable of measuring etching rates across 100-mm or larger wafers. It can resolve etch rate variations across a wafer or within a die. The invention can also be used to make endpoint determinations in etching operations as well as measuring the absolute thickness of thin films.
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Conner William T.
Dalton Timothy J.
Sachs Emanuel M.
Sawin Herbert H.
Massachusetts Institute of Technology
Pham Hoa Q.
Weissburg Steven J.
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