Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2005-05-03
2005-05-03
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S774000, C438S775000
Reexamination Certificate
active
06887797
ABSTRACT:
An apparatus and method of forming an oxynitride insulating layer on a substrate performed by putting the substrate at a first temperature within the main chamber of a furnace, exposing the substrate to a nitrogen containing gas at a second temperature which is higher than the first temperature, and growing the oxynitride layer on the substrate within the main chamber in the presence of post-combusted gases. The higher temperature nitrogen containing gases are combusted in a chamber outside the main chamber. The higher temperature is in the range of 800 to 1200° C., and preferably 950° C. In a second embodiment, distributed N2O gas injectors within the main chamber deliver the nitrogen containing gas. The nitrogen containing gas is pre-heated outside the chamber. The nitrogen containing gas is then delivered to a gas manifold that splits the gas flow and directs the gas to a number of gas injectors, preferably two to four injectors within the main process tube. Gas injection orifices on the order of several millimeters then distribute the pre-decomposed gas to the wafers, producing a more uniformly N-doped wafer load in a batch furnace.
REFERENCES:
patent: 5464792 (1995-11-01), Tseng et al.
patent: 5541436 (1996-07-01), Kwong et al.
patent: 5880040 (1999-03-01), Sun et al.
patent: 5891809 (1999-04-01), Chau et al.
patent: 5960302 (1999-09-01), Ma et al.
patent: 5972804 (1999-10-01), Tobin et al.
patent: 5998270 (1999-12-01), Gilmer et al.
patent: 6017791 (2000-01-01), Wang et al.
patent: 6037224 (2000-03-01), Buller et al.
patent: 6221791 (2001-04-01), Wang et al.
patent: 6436848 (2002-08-01), Ramkumar
Buchanan Douglas A.
Gousev Evgeni P.
Heenan Carol J.
Hodge Wade J.
Shank Steven M.
DeLio & Peterson LLC
Ghyka Alexander
Reynolds Kelly M.
Sabo William D.
LandOfFree
Apparatus and method for forming an oxynitride insulating... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus and method for forming an oxynitride insulating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for forming an oxynitride insulating... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3429255