Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-08-28
2007-08-28
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S528000, C438S535000, C438S676000
Reexamination Certificate
active
10758758
ABSTRACT:
A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then exposing the substrate to electromagnetic radiation have one or more wavelengths between about 600 nm and about 1000 nm under conditions sufficient to heat the layer to a temperature of at least about 300° C. is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs the electromagnetic radiation and anneals a top surface layer of the substrate. In one aspect, the substrate is exposed to the electromagnetic radiation in a laser annealing process.
REFERENCES:
patent: 5000113 (1991-03-01), Wang et al.
patent: 5559367 (1996-09-01), Cohen et al.
patent: 5569501 (1996-10-01), Bailey et al.
patent: 5599590 (1997-02-01), Hayashi et al.
patent: 5744375 (1998-04-01), Kao et al.
patent: 6103305 (2000-08-01), Friedmann et al.
patent: 6303476 (2001-10-01), Hawryluk et al.
patent: 6475888 (2002-11-01), Sohn
patent: 6479821 (2002-11-01), Hawryluk et al.
patent: 6495390 (2002-12-01), Hawryluk et al.
patent: 6559017 (2003-05-01), Brown et al.
patent: 6573030 (2003-06-01), Fairbairn et al.
patent: 6650480 (2003-11-01), Tanaka
patent: 6747282 (2004-06-01), Kroon et al.
patent: 2002/0055012 (2002-05-01), Chou et al.
patent: 2002/0139975 (2002-10-01), Lewis et al.
patent: 2002/0160592 (2002-10-01), Sohn
patent: 2003/0148594 (2003-08-01), Yamazaki et al.
patent: 2003/0196995 (2003-10-01), Jennings
patent: 2003/0201466 (2003-10-01), Ogawa et al.
patent: 2004/0115935 (2004-06-01), Liu
patent: 2005/0056940 (2005-03-01), Sandhu et al.
patent: 375093 (2003-03-01), None
Article by Valentini et al., “Effect fo thermal annealing on the electronic properties of nitrogen doped amorphous carbon-p-type crystalline silicon heterojunction diodes”, American Vacuum Society, 2003, pp. 582-588.
Article by Barradas et al., “Growth and characterization of amorphous carbon films doped with nitrogen”, Nuclear Instruments and Methods in Physics Research B, 161-163 (2000) pp. 969-974.
Article by Kuo et al., “Field emission studies of low-temperature thermal annealing of nitrogen-doped hydrogenated amorphous carbon (a-C:H:N) films”, Diamond and Related Materials 10 (2001) pp. 889-894.
Article by Zhang et al., “Raman analysis of laser annealed nitrogen doped amorphous carbon film”, Solid State Communications 123 (2002) pp. 97-100.
PCT International Search Report from International Application No. PCT/US 2004/032151, dated Feb. 14, 2005.
Autryve Luc Van
Bencher Chris D.
Brough Richard A.
Jennings Dean
Liang Haifan
Applied Materials Inc.
Lee Hsien-Ming
Patterson & Sheridan LLP
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