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Programmable-resistance memory cell

Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate

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Programmed circuit in a semiconductor device

Static information storage and retrieval – Systems using particular element – Flip-flop
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Programming a normally single phase chalcogenide material...

Static information storage and retrieval – Systems using particular element – Amorphous
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Programming a normally single phase chalcogenide material...

Static information storage and retrieval – Systems using particular element – Amorphous
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Programming a phase-change material memory

Static information storage and retrieval – Systems using particular element – Amorphous
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Programming a phase-change material memory

Static information storage and retrieval – Systems using particular element – Amorphous
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Programming a phase-change memory with slow quench time

Static information storage and retrieval – Systems using particular element – Amorphous
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Programming an IGFET read-only-memory

Static information storage and retrieval – Systems using particular element – Semiconductive
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Programming method for phase change memory

Static information storage and retrieval – Systems using particular element – Resistive
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Programming non-volatile storage element using current from...

Static information storage and retrieval – Systems using particular element – Resistive
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Programming of programmable resistive memory devices

Static information storage and retrieval – Systems using particular element – Resistive
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Protection register for a phase-change memory

Static information storage and retrieval – Systems using particular element – Amorphous
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Proton and heavy ion SEU resistant SRAM

Static information storage and retrieval – Systems using particular element – Flip-flop
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Providing a reference voltage to a cross point memory array

Static information storage and retrieval – Systems using particular element – Magnetoresistive
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Providing a reference voltage to a cross point memory array

Static information storage and retrieval – Systems using particular element – Magnetoresistive
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Pseudo tunnel junction

Static information storage and retrieval – Systems using particular element – Magnetoresistive
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Pulse driven single bit line SRAM cell

Static information storage and retrieval – Systems using particular element – Flip-flop
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Pulse reset for non-volatile storage

Static information storage and retrieval – Systems using particular element – Amorphous
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Pulse width control for read and write assist for SRAM circuits

Static information storage and retrieval – Systems using particular element – Flip-flop
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Pulse write techniques for magneto-resistive memories

Static information storage and retrieval – Systems using particular element – Magnetoresistive
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