Programmable-resistance memory cell

Details Programmable-resistance memory cell Programmable-resistance memory cell

2011-01-18

2011-01-18

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S100000, C365S104000

Reexamination Certificate

active

07872901

ABSTRACT:
A memory cell (10) includes a resistive structure (1), and at least two electrodes (2) coupled to the resistive structure (1), wherein: the resistive structure (1) includes hydrogen, and the resistive structure (1) includes a material that exhibits a hydrogen ion mobility value of at least 10−8cm2/Vs.

REFERENCES:
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patent: 6611449 (2003-08-01), Hilliger
patent: 6620207 (2003-09-01), Lin
patent: 6815744 (2004-11-01), Beck et al.
patent: 7583534 (2009-09-01), Forbes et al.
patent: 2003/0217335 (2003-11-01), Chung
patent: 2008/0142925 (2008-06-01), Bednorz et al.

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