Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-12-12
2006-12-12
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S148000
Reexamination Certificate
active
07149107
ABSTRACT:
Providing a reference voltage to a cross point memory array. The invention is a cross point memory array and some peripheral circuitry that, when activated, provides a reference voltage to a cross point array. The peripheral circuitry can be activated before, after or during selection of a specific memory plug. If the peripheral circuitry is activated during selection, only the unselected conductive array lines should be brought to the reference voltage. Otherwise, all the conductive array lines can be brought to the reference voltage.
REFERENCES:
patent: 3886577 (1975-05-01), Buckley
patent: 5296716 (1994-03-01), Ovshinsky et al.
patent: 6487106 (2002-11-01), Kozicki
patent: 6657888 (2003-12-01), Doudin et al.
patent: 6731528 (2004-05-01), Hush et al.
patent: 6753561 (2004-06-01), Rinerson et al.
patent: 6807088 (2004-10-01), Tsuchida
patent: 6825489 (2004-11-01), Kozicki
patent: 6836421 (2004-12-01), Rinerson et al.
patent: 6856536 (2005-02-01), Rinerson et al.
patent: 7002197 (2006-02-01), Perner et al.
patent: 2003/0132456 (2003-07-01), Miyai et al.
patent: 2004/0141369 (2004-07-01), Noguchi
patent: 2005/0135148 (2005-06-01), Chevallier et al.
patent: 2005/0151156 (2005-07-01), Wu et al.
U.S. Appl. No. 60/536,115, filed Jan. 13, 2004, Wu et al.
A.Baikalov, et al, “Field -driven hysteretic and reversible resistive switch at the Ag-Pr0.7Ca0.3MnO3 interface” Applied Physics Letters, vol. 83, No. 5, Aug. 4, 2003, pp. 957-959.
A. Sawa, et al, “Hysteretic current-volyage characteristics and resisitance switching at a rectifying Ti/Pr0.7Ca0.3MnO3interface” Applied Physics Letters, vol. 85, No. 18, Nov. 1, 2004, pp. 4073-4075.
C. Rossel, G.I. Meijer, D. Brémaud, D. Widmer, “Electrical current distribution across a metal-insulator-metal structure during bistable switching,” Journal of Applied Physics, vol. 90, No. 6, Sep. 15, 2001, pp. 2892-2898.
David Oxley, “Memory Effects in Oxide Films” in Oxides and Oxide Films, vol. 6, pp. 251-325 (Chapter 4) (Ashok. K. Vijh ed., Marcel Drekker) (1981).
J.G. Simmons and R.R. Verderber, “New Conduction and Reversible Memory Phenomena in Thin Insulating Films,” Proc. Roy. Soc. A., 301 (1967), pp. 77-102.
Liu et al., “A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films,” Non-Volatile Memory Technology Symposium, Nov. 7, 2001, pp. 1-7.
R.E. Thurstans and D.P. Oxley, “The Electroformed metal-insulator-metal structure: A comprehensive model,” J. Phys. D.: Appl. Phys. 35 (2002), Apr. 2, 2002, pp. 802-809.
Chevallier Christophe
Rinerson Darrell
Auduong Gene N.
Unity Semiconductor Corporation
LandOfFree
Providing a reference voltage to a cross point memory array does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Providing a reference voltage to a cross point memory array, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Providing a reference voltage to a cross point memory array will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3672925