Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2007-12-18
2010-02-09
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S154000
Reexamination Certificate
active
07660147
ABSTRACT:
A programming method for a phase change memory based on the phase transformations between amorphous and crystalline phases is disclosed. The programming method comprises a current pulse with step waveform providing a first crystallization current pulse to the phase change memory and providing a second crystallization current pulse to the phase change memory. The first crystallization current pulse has a first rising edge, a first falling edge and a first peak current held for a first hold time. The second crystallization current pulse has a second peak current. The second peak current follows the first falling edge and is held for a second hold time.
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Chao Te-Sheng
Chen Ming-Jung
Tsai Ming-Jinn
Yeh Philip H.
Industrial Technology Research Institute
Nany Technology Corporation.
Powerchip Semiconductor Corp.
Promos Technologies Inc.
Quintero Law Office
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