Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2004-03-22
2010-10-19
Kunemund, Robert M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S084000, C117S088000, C117S102000, C117S105000, C117S928000, C117S929000, C076SDIG012
Reexamination Certificate
active
07815735
ABSTRACT:
The invention refers to a method and apparatus for CVD coating and to a coated body. To improve the mechanical properties of the structure and surface of the body and to make the method and apparatus as simple and cost-effective as possible, it is suggested in the method, in which a layer is deposited on a substrate in a carbon-containing gas atmosphere:that the process parameters be varied during the coating period in such a way that during the coating period a first operating mode and a second operating mode are repeatedly alternated,wherein in the first operating mode a higher carbon over-saturation of the gas atmosphere occurs near the substrate,and in the second operating mode a lower carbon over-saturation of the gas atmosphere occurs near the substrate.In this way, a body can be produced with a substrate and at least one layer deposited on the surface of the substrate, wherein the layer consists of nano-crystalline diamond.
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Breidt Dirk
Frank Martin
Lemmer Oliver
Banner & Witcoff , Ltd.
Cemecon AG
Kunemund Robert M
Song Matthew J
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