Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1996-03-25
1999-08-03
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117108, 117940, C30B 2518
Patent
active
059320060
ABSTRACT:
Metal insulator semiconductor field effect transistors (MISFETs), charge coupled devices (CCDs), and capacitors based on an epitaxial barium fluoride (BF.sub.2) insulator layer deposited directly onto a single crystal gallium arsenide (GaAs) substrate.
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Hung et al., "Epitaxial Growth of Alkaline Earth Fluoride Films on HF-Treated Si and (NH.sub.4).sub.2 Sx-Treated GaSa without in Situ Cleaning", Appl. Phys. Lett. vol. 60, No. 2, Jan. 13, 1992, pp. 201-203.
Chu Tak Kin
Santiago Francisco
Bechtel, Esq. James B.
Kunemund Robert
The United States of America as represented by the Secretary of
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