Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Reexamination Certificate
2003-10-14
2010-06-29
Kunemund, Robert M (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
C117S205000, C117S206000
Reexamination Certificate
active
07744697
ABSTRACT:
The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.
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I. Grzegory, “
Doradziński Roman Marek
Dwiliński Robert Tomasz
Garczyński Jerzy
Kanbara Yasuo
Sierzputowski Leszek Piotr
Ammono SP. Z O.O.
Kunemund Robert M
Nichia Corporation
Smith Patent Office
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