Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1994-01-28
1996-01-30
Beck, Shrive
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
4272481, 427250, 427252, C23C 1618, C23C 1638
Patent
active
054873576
DESCRIPTION:
BRIEF SUMMARY
The invention relates to the use of boron-containing organic group-V compounds for the preparation of thin films or epitaxial layers by the deposition of the elements of the Vth main group on substrates by gas-phase deposition.
The deposition of such layers consisting of either pure elements of the Vth group or usually of combinations with other elements such as, e.g., gallium arsenide, indium phosphide or gallium phosphide can be used for the fabrication of electrical, electronic, optical or optoelectronic switching elements, compound semiconductors and lasers. The deposition of these layers is carried out from the gas phase.
The properties of these films depend on the deposition conditions and the chemical composition of the deposited film.
Possible deposition methods from the gas phase include all the known methods such as the metal-organic chemical vapor deposition (MOCVD) method, the plasma-enhanced metal-organic chemical vapor deposition (PE-MOCVD) method, the photo-metal-organic vapor phase (photo-MOVP) method, in which the substances are decomposed by UV irradiation, the laser chemical vapor deposition (laser CVD) method or the metal-organic magnetron scattering (MOMS) method. The advantages compared to other methods are controllable layer growth, accurately controlled doping and, owing to the atmospheric-pressure or low-pressure conditions, simple handling and uncomplicated production. This method further permits simple mass production.
BACKGROUND OF THE INVENTION
The MOCVD method employs organometallic compounds which decompose at a temperature below 1100.degree. C. with the deposition of the metal. Typical equipment which at present is used for MOCVD consists of a "bubbler" with a supply for the organometallic components, a reaction chamber which contains the substrate to be coated and a source for a carrier gas which should be inert with respect to the organometallic component. The "bubbler" is maintained at a constant, relatively low temperature which is preferably above the melting point of the organometallic compound, but far below the decomposition temperature. The reaction or decomposition chamber preferably has a much higher temperature, which is below 1100.degree. C., at which the organometallic compound decomposes completely and the metal is deposited. By means of the carrier gas, the organometallic compound is converted to the vapor state and, together with the carrier gas, transferred into the decomposition chamber. The mass flow of the vapor is easily controlled, and this also permits controlled growth of the thin layer.
The other methods of gas phase deposition essentially differ therefrom only by the manner in which the energy required for the decomposition is supplied.
Hitherto the standard MOCVD processes for generating layers containing elements of group V have mainly employed, for example, AsH.sub.3 or PH.sub.3, which do however have major drawbacks such as toxicity and spontaneous inflammability. Their preparation, transport, storage, and the use of these compounds therefore requires elaborate safety precautions.
SUMMARY OF THE INVENTION
The object of the present invention is therefore to find suitable alternative, preferably liquid, group-V organyls which are no longer pyrophoric but which can be decomposed from the gas phase, which are therefore suitable for the various methods of gas-phase deposition and, in particular, subject to drastically reduced general potential hazards.
We have found that with the aid of borane derivatives both inter- and intramolecular adduct formation with elements of the Vth main group is possible which results in coordinatively saturated, low-melting and chemically stable organometalloid compounds, which have a vapor pressure suitable for gas-phase deposition processes, are no longer spontaneously flammable and thus eminently meet the abovementioned requirements.
The invention therefore relates to the use of boron-containing organic group-V compounds for the deposition of the elements of the Vth main group on substrates by gas-phase deposit
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Marschall Christian
Pohl Ludwig
Schumann Herbert
Beck Shrive
Merck Patent Gesellschaft mit beschrankter Haftung
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