4. Semiconductor device manufacturing: process
  5. Formation of electrically isolated lateral semiconductive...
  6. Grooved and refilled with deposited dielectric material
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Gap filling of shallow trench isolation by ozone-tetraethoxysila

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
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Gap-filling of O.sub.3 -TEOS for shallow trench isolation

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Patent

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Gapfill and planarization process for shallow trench isolation

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
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Generation of a loose planarization mask having relaxed boundary

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
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