Gapfill and planarization process for shallow trench isolation

Details Gapfill and planarization process for shallow trench isolation Gapfill and planarization process for shallow trench isolation

1996-08-08

1998-12-22

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438424, 438692, 438788, H01L 2176

Patent

active

058518991

ABSTRACT:
Described is a method for filling shallow trench isolation (STI) trenches in a semiconductor substrate of an integrated circuit with an insulating material and planarizing the resulting structure to the level of adjacent portions of the integrated circuit. The method comprises forming trenches in the non-active regions of a semiconductor substrate, depositing a layer of oxide in the trenches and over the surface of the semiconductor substrate, and removing the oxide from the active areas of the integrated circuit structure, leaving oxide-filled shallow trench isolation structures having a substantially planar topography with respect to the rest of the integrated circuit structure.

REFERENCES:
patent: 4962064 (1990-10-01), Haskell et al.
patent: 5242853 (1993-09-01), Sato et al.
patent: 5350486 (1994-09-01), Huang
patent: 5385861 (1995-01-01), Bashir et al.
patent: 5387540 (1995-02-01), Poon et al.
patent: 5399533 (1995-03-01), Pramanik et al.
patent: 5453639 (1995-09-01), Cronin et al.
patent: 5494857 (1996-02-01), Cooperman et al.
patent: 5498565 (1996-03-01), Gocho et al.
Chatterjee et al. "A Shallow Trench Isolation Study for 0.25/0.18 Mm Cmos Technologies and Beyond"; Symposium on VLSI Technology Digest of Technical Papers ; Jun. 1996 ; 156-157.

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