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Nuclear spin control device

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate

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Nucleation for improved flash erase characteristics

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Nucleation for improved flash erase characteristics

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Nucleation layer for improved light extraction from light...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate

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NVRAM array device with enhanced write and erase

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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NVRAM cell having increased coupling ratio between a control...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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NVRAM cell using sharp tip for tunnel erase

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Nyquist frequency bandwidth hact memory

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Charge transfer device
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