Nyquist frequency bandwidth hact memory

Details Nyquist frequency bandwidth hact memory Nyquist frequency bandwidth hact memory

1992-08-12

1993-11-16

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Charge transfer device

257215, 257473, 341172, 341122, 310313R, 310313B, H01L 2984, H01L 2996, H01L 4108

Patent

active

052626598

ABSTRACT:
A HACT device which propagates charge packets 21 along a charge transport channel 17 by a surface acoustic wave (SAW) 14 is provided with an interdigital electrode grid 30 disposed on the upper surface of the HACT, near the charge transport channel 17, having electrodes 30 spaced a distance of one-half wavelength of the SAW. A hold voltage Vh is applied across alternating electrodes to store (i.e., stop and hold) each charge packet. When a charge packet is to be released, the hold voltage Vh is removed and the electrodes 30 are shorted together or alternatively connected through a maximum allowable impedance, thereby allowing each charge packet 21 to be stored and released by the device without having the electrodes 30 absorb the SAW electric fields. Because the electrodes 30 are spaced one-half a SAW wavelength apart, the HACT memory can store each and every charge packet 21, thereby providing a Nyquist bandwidth device. Furthermore, the electrodes 30 are made thin to reduce mechanical absorption of the SAW by the electrodes.

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