4. Active solid-state devices (e.g., transistors, solid-state diode
  5. With means to increase breakdown voltage threshold
  6. Floating pn junction guard region
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High voltage semiconductor structure and method

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Floating pn junction guard region
Patent

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High voltage transistor having edge termination utilizing trench

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Floating pn junction guard region
Patent

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Power diode structure

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Floating pn junction guard region
Reexamination Certificate

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Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Floating pn junction guard region
Patent

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Semiconductor structure with field-limiting rings and method for

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Floating pn junction guard region
Patent

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Trench MOS device and process for radhard device

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Floating pn junction guard region
Reexamination Certificate

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Vertical semiconductor component having a reduced electrical...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Floating pn junction guard region
Reexamination Certificate

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