Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Floating pn junction guard region
Reexamination Certificate
2005-01-25
2005-01-25
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
Floating pn junction guard region
C257S409000
Reexamination Certificate
active
06847091
ABSTRACT:
A vertical semiconductor component having a semiconductor body of a first conductivity type is described. In a surface region of the semiconductor body, at least one zone of a second conductivity type, opposite to the first conductivity type, is embedded. Regions of the second conductivity type are provided in the semiconductor body in a plane running substantially parallel to the surface of the surface region. The regions are in this case sufficiently highly doped that they cannot be depleted of charge carriers when a voltage is applied.
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Praveen M. Shenoy et al.: “The Planar 6H-SiC ACCUFET: A New High-Voltage Power MOSFET Structure”, IEEE Electron Device Letters, Vol. 18, No. 12, Dec. 1997, pp. 589-91.
Deboy Gerald
Mitlehner Heinz
Tihanyi Jenö
Fahmy Wael
Farahani Dana
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
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