High voltage semiconductor structure and method

Details High voltage semiconductor structure and method High voltage semiconductor structure and method

1993-06-28

1994-09-06

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

Floating pn junction guard region

257653, 257927, H01L 2940, H01L 2906

Patent

active

053451015

ABSTRACT:
A high voltage semiconductor structure (10) includes a semiconductor substrate (11) of a first conductivity type. The structure (10) also includes a first region (12) providing a main rectifying junction, a second region (13, 17, 21) of a second conductivity type formed in the semiconductor substrate and surrounding the first region ( 12 ) and a third region (14, 18, 22) of the second conductivity type. The third region (14, 18, 22) has reduced conductivity and greater junction depth compared to the second region (13, 17, 21). The third region (14, 18, 22) surrounds and is in contact with the second region (13, 17, 21) to form field rings which improve (increase) breakdown voltage of the high voltage semiconductor structure (10).

REFERENCES:
patent: 4774560 (1988-09-01), Coe
patent: 5075739 (1991-12-01), Davies
T. Ma et al., "Junction Breakdown Analysis of a Floating Field-Emitting Ring Structure using a Pisces-2B Device Simulator", Solid-State Electronics, vol. 35, No. 2, pp. 201-205, 1992.
M. Adler et al., "Theory and Breakdown Voltage for Planar Devices with a Single Field Limiting Ring", IEEE Transactions on Electronic Devices, vol. Ed. 24, No. 2, Feb. 1977, pp. 107-112.

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