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Light emission diode comprising a pn junction of p-type and n-ty

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Patent

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Light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Reexamination Certificate

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Light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Reexamination Certificate

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Light emitting device and method of fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Reexamination Certificate

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Light emitting device having flat growth GaN layer

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Reexamination Certificate

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Light emitting diode having an improved GaP compound substrate f

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Patent

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Light emitting diodes with graded composition active regions

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Reexamination Certificate

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Light-emitting device comprising gallium-nitride-group...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Reexamination Certificate

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Light-emitting diode and light-emitting diode array

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Reexamination Certificate

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Light-emitting semiconductor device using gallium nitride...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Reexamination Certificate

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