Light emitting diode having an improved GaP compound substrate f

Details Light emitting diode having an improved GaP compound substrate f Light emitting diode having an improved GaP compound substrate f

1992-07-27

1994-04-12

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant concentration or concentration profile

257102, 257103, 372 43, H01L 3300

Patent

active

053028392

ABSTRACT:
A compound semiconductor single crystal which has an Si concentration of not more than 1.times.10.sup.17 atoms/cm.sup.3 and/or an O concentration of not more than 7.times.10.sup.16 atoms/cm.sup.3 is particularly suitable for use as substrate for epitaxial deposition of a high luminance light-emitting device which emits green light.

REFERENCES:
patent: 4017880 (1977-04-01), Kasami et al.
Patent Abstracts of Japan, vol. 10, No. 71, (C-334) (2128), 20 May 1986 & JP-A-60 210 599,23, Oct. 1985, Tsuji.
Journal of Applied Physics, vol. 45, No. 1, Jan. 1974, New York US, pp. 243-245, Kim, "Total Oxygen Content of Gallium Phosphide Grown by the Czochralski Technique Using Liquid Encapsulation".
Journal of Applied Physics, vol. 44, No. 10, Oct. 1973, New York US, pp. 4758-4768, Lightowlers, "Nuclear Microanalysis of Oxygen Concentration in Liquid-Phase Epitaxial Gallium Phoshide".
Journal of the Electrochemical Society, vol. 120, No. 8, Aug. 1973, Manchester, N.H. US, pp. 1128-1131, Saul, "Vapor Doped Multislice LPE Fot Efficient GaP Green Leds".

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