Light emission diode comprising a pn junction of p-type and n-ty

Details Light emission diode comprising a pn junction of p-type and n-ty Light emission diode comprising a pn junction of p-type and n-ty

1993-11-09

1995-01-17

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant concentration or concentration profile

257 13, 257 79, 257102, 257103, 257201, 257432, 257442, 257607, 257614, H01L 2922, H01L 29227, H01L 310296, H01L 2714

Patent

active

053828135

ABSTRACT:
A light emission diode comprises a semiconductor substrate and a pn junction structure including an n-type ZnS compound semiconductor layer and a p-type ZnS compound semiconductor layer, Al being present in at least one of the semiconductor layers. By this, the diode is able to emit blue light at a high luminous intensity.

REFERENCES:
patent: 5045894 (1991-09-01), Migita et al.
patent: 5103269 (1992-04-01), Tomomura et al.
patent: 5198690 (1993-03-01), Kitagawa et al.

Affiliated with

Also associated with

Rating

Light emission diode comprising a pn junction of p-type and n-ty does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light emission diode comprising a pn junction of p-type and n-ty, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emission diode comprising a pn junction of p-type and n-ty will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-748674