Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Reexamination Certificate
2006-08-15
2006-08-15
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular dopant concentration or concentration profile
C257S094000, C257S103000
Reexamination Certificate
active
07091526
ABSTRACT:
A light emitting device100has a light emitting layer portion9which comprises an active layer5composed of an MgxZn1-xO-type oxide semiconductor, a p-type cladding layer6again composed of an MgxZn1-xO-type oxide semiconductor, and an n-type cladding layer3. On the p-type cladding layer6of the light emitting layer portion9, a light extraction layer7is configured using an oxide, where the light extraction layer7has a refractive index at a dominant emission wavelength of light extracted from the active layer5smaller than that of the cladding layers3,6. This makes it possible to efficiently extract the light emitted from the light emitting layer portion9to the external of the light emitting device100. This is it successful in providing a high-light-extraction-efficiency light emitting device having the light emitting layer portion composed of an oxide semiconductor, and a method of fabricating the same.
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Nguyen Cuong
Shin-Etsu Handotai & Co., Ltd.
Snider Ronald R.
Snider & Associates
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