Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Reexamination Certificate
2007-03-27
2007-03-27
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular dopant concentration or concentration profile
C257S103000, C257S040000
Reexamination Certificate
active
10072507
ABSTRACT:
A light emitting device and electronic equipment having a long life at a low electric power consumption are provided. A hole transporting region composed of a hole transporting material, an electron transporting region composed of an electron transporting material, and a mixture region in which both the hole transporting material and the electron transporting material are mixed at a fixed ratio are formed within an organic compound film. Regions having a concentration gradient are formed between the mixture region and carrier transporting regions until the fixed ratio is achieved. In addition, by doping a light emitting material into the mixture region, functions of hole transportation, electron transportation, and light emission can be respectively expressed while all of the interfaces existing between layers of a conventional lamination structure are removed. Organic light emitting elements having low electric power consumption and a long life can thus be provided, and light emitting devices and electronic equipment can be manufactured using the organic light emitting elements.
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Seo Satoshi
Yamazaki Shunpei
Fish & Richardson P.C.
Rose Kiesha
Semiconductor Energy Laboratory Co,. Ltd.
Smith Zandra V.
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