Bistable resistance value acquisition device, manufacturing...

Details Bistable resistance value acquisition device, manufacturing... Bistable resistance value acquisition device, manufacturing...

2011-01-25

2011-01-25

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE29002, C438S102000, C438S103000, C365S163000, C365S001000

Reexamination Certificate

active

07875872

ABSTRACT:
A ferroelectric layer (104) is sandwiched between a lower electrode layer (103) and an upper electrode (105). When a predetermined voltage (DC or pulse) is applied between the lower electrode layer (103) and the upper electrode (105) to change the resistance value of the ferroelectric layer (104) to switch a stable high resistance mode and low resistance mode, a memory operation is obtained. A read can easily be done by reading a current value when a predetermined voltage is applied to the upper electrode (105).

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