Bottom electrode for memory device and method of forming the...

Details Bottom electrode for memory device and method of forming the... Bottom electrode for memory device and method of forming the...

2010-02-12

2011-11-01

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S314000

Reexamination Certificate

active

08049200

ABSTRACT:
Contacts having use in an integrated circuit and exemplary methods of forming the contacts are disclosed. The methods involve forming a conductive cap over a metal plug. The invention can mitigate keyholes in the contacts by capping and encapsulating the conductive material used to form the contact. The exemplary cap may be made of a nitride material.

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