Semiconductor device with high conductivity region using...

Details Semiconductor device with high conductivity region using... Semiconductor device with high conductivity region using...

2007-04-24

2007-04-24

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S561000, C257SE21056

Reexamination Certificate

active

10151595

ABSTRACT:
A method and structure is provided for an integrated circuit with a semiconductor substrate having an opening provided therein. A doped high conductivity region is formed from doped material in the opening and a diffused dopant region proximate the doped material in the opening. A structure is over the doped high conductivity region selected from a group consisting of a wordline, a gate, a dielectric layer, and a combination thereof.

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