Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-02
2005-08-02
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S328000, C438S275000, C438S595000, C438S182000, C438S270000, C438S257000, C438S694000
Reexamination Certificate
active
06924191
ABSTRACT:
A method for fabricating features on a substrate having reduced dimensions. The features are formed by defining a first mask on regions of the substrate. The first mask is defined using lithographic techniques. A second mask is then conformably formed on one or more sidewalls of the first mask. The features are formed on the substrate by removing the first mask and then etching the substrate using the second mask as an etch mask.
REFERENCES:
patent: 5824578 (1998-10-01), Yang
patent: 5942787 (1999-08-01), Gardner et al.
patent: 5981398 (1999-11-01), Tsai et al.
patent: 6013570 (2000-01-01), Yu et al.
patent: 6022815 (2000-02-01), Doyle et al.
patent: 6051486 (2000-04-01), Gardner
patent: 6110837 (2000-08-01), Linliu et al.
patent: 6162696 (2000-12-01), Cheng et al.
patent: 6197644 (2001-03-01), Gardner et al.
patent: 6207490 (2001-03-01), Lee
patent: 6346449 (2002-02-01), Chang et al.
patent: 6362061 (2002-03-01), Krivokapic et al.
patent: 6406951 (2002-06-01), Yu
patent: 6566208 (2003-05-01), Pan et al.
patent: 2002/0009859 (2002-01-01), Oh
patent: 2002/0142539 (2002-10-01), Tu et al.
patent: 2003/0032228 (2003-02-01), Honeycutt
PCT International Search Report Dated Nov. 12, 2003, For International Application No. PCT/US 03/19250, International Filing Date Jun. 18, 2003, For Applicant Applied Materials, Inc.
Bencher Christopher Dennis
Lill Thorsten B.
Liu Wei
Mui David S. L.
Applied Materials Inc.
Bach Joseph
Moser Patterson & Sheridan LLP.
Smith Matthew
Yevsikov Victor V
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