VHF/UHF reactor system

Details VHF/UHF reactor system VHF/UHF reactor system

1992-03-13

1993-05-11

LaRoche, Eugene R.

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Plasma generating

31323131, 333 32, H05H 124

Patent

active

052104664

ABSTRACT:
A plasma processing reactor is disclosed which incorporates an integral co-axial transmission line structure that effects low loss, very short transmission line coupling of ac power to the plasma chamber and therefore permits the effective use of VHF/UHF frequencies for generating a plasma. The use of VHF/UHF frequencies within the range 50-800 megahertz provides commercially viable processing rates (separate and simultaneous etching and deposition) and substantial reduction in sheath voltages compared to conventional frequencies such as 13.56 MHz. As a result, the probability of damaging electrically sensitive small geometry devices is reduced.

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Van Den Hoek et al, Power Loss Mechanisms . . . , J. Vacuum Science and Technology, No. 3 (1987).
Bias ECR Device, Patent Abstracts of Japan, vol. 14, No. 412 (1990).

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