4. Semiconductor device manufacturing: process
  5. Formation of semiconductive active region on any substrate
  6. Fluid growth from gaseous state combined with preceding...

Zhiyuan Ye

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Formation of epitaxial layer containing silicon and carbon

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with preceding...
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Method of ultra-shallow junction formation using Si film...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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Methods of forming carbon-containing silicon epitaxial layers

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
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Phosphorus containing Si epitaxial layers in N-type...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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Use of CL2 and/or HCL during silicon epitaxial film formation

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
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Profile ID: LFUS-PAI-P-2253902

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