Phosphorus containing Si epitaxial layers in N-type...

Details Phosphorus containing Si epitaxial layers in N-type... Phosphorus containing Si epitaxial layers in N-type...

2011-06-14

2011-06-14

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S607000, C257SE21461

Reexamination Certificate

active

07960236

ABSTRACT:
Methods for formation of epitaxial layers containing n-doped silicon are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of the n-doped epitaxial layer involves exposing a substrate in a process chamber to deposition gases including a silicon source, a carbon source and an n-dopant source. An epitaxial layer may have considerable tensile stress which may be created in a significant amount by a high concentration of n-dopant. A layer having n-dopant may also have substitutional carbon. Phosphorus as an n-dopant with a high concentration is provided. A substrate having an epitaxial layer with a high level of n-dopant is also disclosed.

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