Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with preceding...
Reexamination Certificate
2011-03-01
2011-03-01
Fahmy, Wael M (Department: 2891)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with preceding...
C438S503000, C438S504000, C438S508000, C257SE21042, C257SE21103, C257SE21106
Reexamination Certificate
active
07897495
ABSTRACT:
Methods for formation of epitaxial layers containing silicon are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of the epitaxial layer involves exposing a substrate in a process chamber to deposition gases including two or more silicon source such as silane and a higher order silane. Embodiments include flowing dopant source such as a phosphorus dopant, during formation of the epitaxial layer, and continuing the deposition with the silicon source gas without the phosphorus dopant.
REFERENCES:
patent: 3650042 (1972-03-01), Boerger et al.
patent: 3757733 (1973-09-01), Reinberg
patent: 4900591 (1990-02-01), Bennett et al.
patent: 4976996 (1990-12-01), Monkowski et al.
patent: 5108792 (1992-04-01), Anderson et al.
patent: 5179677 (1993-01-01), Anderson et al.
patent: 5186718 (1993-02-01), Tepman et al.
patent: 5207835 (1993-05-01), Moore
patent: 5854095 (1998-12-01), Kang et al.
patent: 5976261 (1999-11-01), Moslehi et al.
patent: 6083321 (2000-07-01), Lei et al.
patent: 6184154 (2001-02-01), Dietze et al.
patent: 6221742 (2001-04-01), Park et al.
patent: 6232196 (2001-05-01), Raaijmakers et al.
patent: 6428859 (2002-08-01), Chiang et al.
patent: 6468924 (2002-10-01), Lee et al.
patent: 6803297 (2004-10-01), Jennings et al.
patent: 6821825 (2004-11-01), Todd et al.
patent: 6875271 (2005-04-01), Glenn et al.
patent: 6897131 (2005-05-01), Ramachandran et al.
patent: 6900115 (2005-05-01), Todd
patent: 6916398 (2005-07-01), Chen et al.
patent: 6998153 (2006-02-01), Chiang et al.
patent: 7132338 (2006-11-01), Samoilov et al.
patent: 7312128 (2007-12-01), Kim et al.
patent: 7405158 (2008-07-01), Lai et al.
patent: 7521365 (2009-04-01), Kim et al.
patent: 7560352 (2009-07-01), Carlson et al.
patent: 7572715 (2009-08-01), Kim et al.
patent: 7588980 (2009-09-01), Kim et al.
patent: 7598178 (2009-10-01), Samoilov et al.
patent: 7605060 (2009-10-01), Meunier-Beillard et al.
patent: 2001/0028924 (2001-10-01), Sherman
patent: 2001/0034123 (2001-10-01), Jeon et al.
patent: 2002/0031618 (2002-03-01), Sherman
patent: 2002/0068458 (2002-06-01), Chiang et al.
patent: 2002/0094689 (2002-07-01), Park
patent: 2002/0104481 (2002-08-01), Chiang et al.
patent: 2002/0106846 (2002-08-01), Seutter et al.
patent: 2003/0079686 (2003-05-01), Chen et al.
patent: 2003/0129811 (2003-07-01), Raaijmakers et al.
patent: 2004/0224089 (2004-11-01), Singh et al.
patent: 2005/0079691 (2005-04-01), Kim et al.
patent: 2005/0188923 (2005-09-01), Cook et al.
patent: 2005/0263795 (2005-12-01), Choi et al.
patent: 2006/0115933 (2006-06-01), Ye et al.
patent: 2006/0115934 (2006-06-01), Kim et al.
patent: 2006/0166414 (2006-07-01), Carlson et al.
patent: 2006/0216876 (2006-09-01), Kim et al.
patent: 2006/0234488 (2006-10-01), Kim et al.
patent: 2006/0240630 (2006-10-01), Bauer et al.
patent: 2007/0246354 (2007-10-01), Ellul et al.
patent: 2007/0287272 (2007-12-01), Bauer et al.
patent: 2008/0014721 (2008-01-01), Bauer
patent: 2008/0060938 (2008-03-01), Miller et al.
patent: 2008/0066684 (2008-03-01), Patalay et al.
patent: 2008/0069951 (2008-03-01), Chacin et al.
patent: 2008/0182397 (2008-07-01), Lam et al.
patent: 2008/0210163 (2008-09-01), Carlson et al.
“PCT/US 07/87061—Apr. 16, 2008—Written Opinion”.
“PCT/US 07/87061—Apr. 16, 2008—Search Report”.
USPTO Final Office Action, mailed Mar. 10, 2009, for U.S. Appl. No. 11/609,590, 13 pp.
Final Office Action in U.S. Appl. No. 11/669,550, (May 13, 2009), 10 pgs.
“USPTO Office Action mailed Sep. 5, 2008—U.S. Appl. No. 11/609,590, filed Dec. 12, 2006”, 15 pages.
“PCT International Search Report mailed Oct. 1, 2008 for International Application No. PCT/US07/87050 filed Dec. 11, 2007,” 3 pgs.
“PCT Written Opinion mailed Oct. 1, 2008 for International Application No. PCT/US07/87050 filed Dec. 11, 2007,” 5 pgs.
Bauer, M. , “Tensile Strained Selective Silicon Carbon Alloys for Recessed Source Drain Areas of Devices”,Abstract 210th ECS Meeting Oct. 29 through Nov. 3, 2006.
Non-Final Office Action in U.S. Appl. No. 11/669,550, (Dec. 21, 2009), 23 pgs.
Kim Yihwan
Lam Andrew M.
Ye Zhiyuan
Applied Materials Inc.
Diehl Servilla LLC
Fahmy Wael M
Yang Minchul
LandOfFree
Formation of epitaxial layer containing silicon and carbon does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Formation of epitaxial layer containing silicon and carbon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Formation of epitaxial layer containing silicon and carbon will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2672088