Tsuguo Inata

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High electron mobility semiconductor device employing selectivel

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Non-linear optical device having an improved rate for recovery

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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Optically activated resonant-tunneling transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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Resonant tunneling semiconductor device

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Resonant tunnelling barrier structure device

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Profile ID: LFUS-PAI-P-754376

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