Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1991-09-10
1993-11-30
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 14, 257 21, 257 23, 257 29, H01L 2714, H01L 3100
Patent
active
052668142
ABSTRACT:
A resonant-tunneling transistor comprises a first semiconductor layer acting as a collector, a second semiconductor layer provided on the first semiconductor layer and forming a potential barrier of electrons in the conduction band, a third semiconductor layer provided on the second semiconductor layer and forming a quantum well of electrons in the conduction band, a fourth semiconductor layer provided on the third semiconductor layer and forming a quantum well of holes in the valence band, the fourth semiconductor layer simultaneously forming a potential barrier of electrons in the conduction band, a fifth semiconductor layer provided on the fourth semiconductor layer acting as an emitter, a first electrode provided in contact with the first semiconductor layer for recovering electrons therefrom, a second electrode provided in contact with the fifth semiconductor layer for injecting electrons thereinto, and an optical passage for introducing an optical beam to the first semiconductor layer.
REFERENCES:
patent: 4814847 (1989-03-01), Tabatabaie
patent: 5121181 (1992-06-01), Smith, III et al.
Inata Tsuguo
Muto Shun-ichi
Crane Sara W.
Fujitsu Limited
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