Non-linear optical device having an improved rate for recovery

Details Non-linear optical device having an improved rate for recovery Non-linear optical device having an improved rate for recovery

1991-12-19

1993-06-01

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 21, 257 17, 257 22, 257 25, 257185, 359248, H01L 2714

Patent

active

052162613

ABSTRACT:
A non-linear optical device having the TBQ structure comprises an active layer forming a quantum well for interacting with an incident optical beam, an electron removal layer provided adjacent to the active layer at a first side thereof with a first barrier layer intervening therebetween for removing the electrons from the active layer; and a hole removal layer provided adjacent to the active layer at a second, opposite side of the active layer with a second barrier layer intervening therebetween for removing the holes from the active layer; wherein the first and second barrier layers have respective thicknesses determined such that the probability of tunneling of the electrons through the first barrier layer and the probability of tunneling of the holes through the second barrier layer are substantially equal with each other.

REFERENCES:
patent: 4720309 (1988-01-01), Deveaud et al.

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