Resonant tunnelling barrier structure device

Details Resonant tunnelling barrier structure device Resonant tunnelling barrier structure device

1988-11-01

1990-05-29

Edlow, Martin H.

357 16, 357 57, H01L 2712

Patent

active

049299840

ABSTRACT:
A resonant tunnelling barrier (RTB) structure device (e.g., diode), having a large peak-to-valley current density (Jp/Jv) ratio, includes an InP substrate and a RTB structure structure. The RTB structure is formed by a first doped layer of InP or In.sub.0.53 GA.sub.0.47 As, a first barrier layer of Al.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y (0.ltoreq.x.ltoreq.1, y=0.51+0.05x), a well layer of InP or In.sub.z Ga.sub.1-z As (0.52.ltoreq.z.ltoreq.0.54), a second barrier layer of the AlGaAsSb, and a second doped layer of InP or In.sub.z Ga.sub.1-z As. The layers of the RTB structure are lattice-matched to InP.

REFERENCES:
patent: 4712121 (1987-12-01), Yokoyama
Morkoc et al., Appl. Phys. Lett., 14 Jul. 1986 pp. 70-72.
Japanese Journal of Applied Physics, vol. 25, No. 12, Dec. 1986, pp. L983-L985, "Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE", by Tsuguo Inata et al.

Affiliated with

Also associated with

Rating

Resonant tunnelling barrier structure device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Resonant tunnelling barrier structure device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resonant tunnelling barrier structure device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-524272