Resonant tunneling semiconductor device

Details Resonant tunneling semiconductor device Resonant tunneling semiconductor device

1987-08-04

1989-04-25

LaRoche, Eugene R.

357 16, 357 34, 357 61, H01L 2712, H01L 4500, H01L 29161, H01L 2972

Patent

active

048252646

ABSTRACT:
A resonant tunneling semiconductor device having a large peak-to-valley current density J.sub.p /J.sub.v ratio comprises an InP substrate, a first contact compound semiconductor lattice-matched to Inp, a first barrier layer of (In.sub.0.52 Al.sub.0.48 As).sub.z (In.sub.0.53 Ga.sub.0.47 As).sub.1-z, (0<z.ltoreq.1), a well layer of In.sub.1-y Ga.sub.y As, (0.48.gtoreq.y.gtoreq.0.46), a second barrier layer of (In.sub.0.52 Al.sub.0.48 As).sub.z -(In.sub.0.53 Ga.sub.0.47 As).sub.1-z, (0<z.ltoreq.1), and a second contact layer compound semiconductor lattice-matched to InP:The first and second barrier layers and the well layer forming a quantum-well structure.
Instead of the quantum-well structure above, it is possible to adopt the quantum-well structure of strained-layers comprising first and second barrier layers which are of In.sub.1-x Al.sub.x As (0.48<x.ltoreq.1) and have a thickness of 0.5 to 10.0 nm.

REFERENCES:
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Japanese Journal of Applied Physics, vol. 25, No. 8, Aug. 1986, "Conduction Band Edge Discontinuity of In0.52Ga0.48As/In0.52(Gal-xAlx)0.48As (0.ltoreq.x.ltoreq.1) Heterostructures", by Sugiyama et al., pp. L648-L650.
Applied Physics Letters, vol. 45, No. 12, Dec. 15, 1984, "Quantum Well Oscillators", by Sollner et al., pp. 1319-1321.
Applied Physics Letters, vol. 48, No. 26, Jun. 30, 1986, "InGaAs/InAlAs Hot-Electron Transistor", Reddy et al., pp. 1799-1801.
International Electron Devices Meeting, Technical Digest, Dec. 1-4, 1985, "Observation of Negative Conductance by Sequential Resonant Tunneling Through a One-Micron Thick Superlattice", by Capasso et al., pp. 764-765.
"Excellent Negative Differential Resistance of InAlAs/InGaAs Inata et al., Resonant Tunneling Barrier Structures Grown by MBE", Japanese Journal of Applied Physics, vol. 25, No. 12, Dec. 1986, pp. L983-L985.
Muto et al. "Quantum Well Width Dependence of Negative Differential Resistance of In0.52Al0.48As/In0.53Ga0.47As Resonant Tunneling Barriers Grown by MBE", Japanese Journal of Applied Physics, vol. 26, No. 3, Mar. 1987, pp. L220-L222.
Osbourn, "Strained-Layer Superlattices from Lattice Mismatched Materials", J. Appl. Phys. vol. 53, No. 3, Mar. 1982.
T. H. H. Vuong and D. C. Tsui, "Tunneling in In.sub.0.53 Ga.sub.0.47 As-InP Double-Barrier Structures", Appl. Phys. Lett., vol. 50(4) Jan. 1987.

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