4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Incoherent light emitter structure
  6. With particular dopant concentration or concentration profile

Toshio Otaki

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Gap light emitting device having a low carbon content in the sub

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Patent

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Gap red light emitting diode

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Patent

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Light emitting diode having an improved GaP compound substrate f

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Patent

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Liquid-phase growth process of compound semiconductor

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent

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Method for fabricating a gap type semiconductor substrate of red

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Patent

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Profile ID: LFUS-PAI-P-743315

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