Gap light emitting device having a low carbon content in the sub

Details Gap light emitting device having a low carbon content in the sub Gap light emitting device having a low carbon content in the sub

1995-01-23

1996-05-07

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant concentration or concentration profile

257102, 257103, H01L 3300

Patent

active

055148816

ABSTRACT:
A semiconductor substrate for GaP type light emitting devices which includes an n-type single crystal substrate, an n-type GaP layer, and a p-type GaP layer formed on the n-type GaP single crystal substrate. The carbon concentration in the n-type GaP single crystal substrate is more than 1.0.times.10.sup.16 atoms/cc, but less than 1.0.times.10.sup.17 atoms/cc. The n-type GaP single crystal substrate is obtained from an n-type GaP single crystal grown by the Liquid Encapsulation Czochralski method wherein B.sub.2 O.sub.3 containing water corresponding to 200 ppm or more is used as an encapsulation liquid.

REFERENCES:
patent: 4017880 (1977-04-01), Kasami et al.

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