Liquid-phase growth process of compound semiconductor

Details Liquid-phase growth process of compound semiconductor Liquid-phase growth process of compound semiconductor

1992-07-27

1993-08-10

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437119, 437130, C30B 700, H01L 21208

Patent

active

052345343

ABSTRACT:
A liquid-phase growth process of a compound semiconductor which is capable of effectively controlling the generation of a surface defect and improve the product quality and production yield is disclosed in which before the start of liquid-phase growth, a substrate and a solution are held in a 100% hydrogen atmosphere or a mixed gas atmosphere consisting of more than 80% of hydrogen and the rest of an inert gas, and immediately before the start of the liquid-phase growth, the atmosphere is changed to a mixed gas atmosphere consisting of not more than 60% of hydrogen and the rest of the inert gas.

REFERENCES:
patent: 4110133 (1978-08-01), Garret et al.
patent: 4268327 (1981-05-01), Uragaki et al.
Pak et al, "Suppression of thermal damage of InP by adding Ar in H.sub.2 Atmosphere" Jap. J. Appl. Phys, vol. 18 (1979) pp. 1859-1860.

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