Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Patent
1992-10-13
1994-04-05
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular dopant concentration or concentration profile
257 87, 257102, H01L 3300
Patent
active
053007921
ABSTRACT:
A GaP red light emitting diode (LED) which is free from a problem of luminance reduction comprises an n-type GaP epitaxial layer grown on an n-type GaP substrate, and a p-type GaP epitaxial layer grown on the n-type Gap epitaxial layer, wherein the n-type epitaxial layer has an Si concentration of not more than 5.times.10.sup.17 atoms/cc and an S concentration of not more than 1.times.10.sup.18 atoms/cc.
REFERENCES:
patent: 4001056 (1977-01-01), Groves et al.
patent: 4017800 (1977-04-01), Kasami et al.
patent: 4224632 (1980-09-01), Iwamoto et al.
Journal of the Electrochemical Society, vol. 124, No. 8, Aug. 1977, Manchester, New Hampshire, pp. 1285-1289, Tatsuhiko Niina "GaP Red Light Emitting Diodes Produced by a Rotating Boat System of Liquid Phase Epitaxial Growth".
Journal of the Electrochemical Society, vol. 122, No. 9, Sep. 1975, Manchester, New Hampshire, pp. 1230-1233, O. G. Lorimor et al, "Observations on Si Contamination in GaP LPE".
Patent Abstracts of Japan, vol. 8, No. 103 (E-244) May 15, 1984 & JP-A-59 18 686 (Ssnyo Denki KK) Jan. 31, 1984, Kentarou.
Revue De Physique Applilquee, vol. 13, No. 12, Dec. 1978, Paris FR pp. 741-744, J. Pfeifer "Observations on Residual Donors in GaP LPE".
Arisaka Susumu
Otaki Toshio
Tamura Yuki
Yanagisawa Munehisa
Hille Rolf
Shin-Etsu Handotai & Co., Ltd.
Tran Ninhloan
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