Method for fabricating a gap type semiconductor substrate of red

Details Method for fabricating a gap type semiconductor substrate of red Method for fabricating a gap type semiconductor substrate of red

1995-08-17

1998-12-22

Trinh, Michael

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438 22, 438 45, 438557, H01L 2100

Patent

active

058518509

ABSTRACT:
A semiconductor substrate for GaP type light emitting devices which includes an n-type single crystal substrate, an n-type GaP layer, and a p-type GaP layer formed on the n-type GaP single crystal substrate. The carbon concentration in the n-type GaP single crystal substrate is more than 1.0.times.10.sup.16 atoms/cc but less than 1.0.times.10.sup.17 atoms/cc. The n-type GaP single crystal substrate is obtained from an n-type GaP single crystal grown by the Liquid Encapsulation Czochralski method wherein B.sub.2 O.sub.3 containing water corresponding to 200 ppm or more is used as an encapsulation liquid.

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Nishio et al, "Influence of Melt Preparation on Residual Impurity Concentration in Semi-Insulating LEC GaAs", Journal of Crystal Growth 96 (1989), pp. 605-608, 1989.
Young et al, "The Electrical Properties of Undoped and Oxygen doped GaP grown by the Liquid Encapsulation Technique", J. Phys. D., Appli. Phys, 1971, vol. 4, pp. 995-1005, 1971.

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