4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Specified wide band gap semiconductor material other than...
  6. Diamond or silicon carbide

Tomohisa Mizuno

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BiCMOS device with low bandgap CMOS contact regions and low band

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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Field effect transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate

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Field effect transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate

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Method of manufacturing a substrate using an SiGe layer

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate

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MOS field effect transistor and method for manufacturing the sam

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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Profile ID: LFUS-PAI-P-126039

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