Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-09-27
1993-06-01
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257191, 257192, 257197, H01L 29163, H01L 29165, H01L 2970, H01L 2978
Patent
active
052162710
ABSTRACT:
According to the present invention, a control gate is formed on an n-type Si substrate, and a p-type source-drain region is formed in the surface of the substrate on both the sides of the control gate. A p-type Si.sub.x Ge.sub.1-x (0.ltoreq.x<1) layer and an Al electrode are sequentially formed in the source-drain region. The energy difference between the valence band of the SiGe layer and a vacuum level is smaller than the energy difference between the valence band of an Si layer constituting the source-drain region and the vacuum level, and the energy difference of the conduction band of the SiGe layer and the vacuum level is larger than the energy difference of the conduction band of the Si layer and the vacuum level. For this reason, a Schottky barrier height is decreased, and resistances between the semiconductor layers and the Al electrode are reduced.
REFERENCES:
patent: 4521794 (1985-06-01), Murase et al.
patent: 4728998 (1988-03-01), Strain
patent: 5089872 (1992-02-01), Ozturk et al.
Mizuno Tomohisa
Takagi Shin-ichi
Jackson, Jr. Jerome
Kabushiki Kaisha Toshiba
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