Field effect transistor

Details Field effect transistor Field effect transistor

2006-01-23

2010-02-09

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S018000, C257S020000, C257S024000, C257S027000, C257S063000, C257S190000

Reexamination Certificate

active

07659537

ABSTRACT:
A field effect transistor comprises a source and a drain, and a channel layer of Si1-x-yGexCycrystal (1>x>0, 1>y≧0). Ge composition increases toward a drain end, in a vicinity of a source end of the channel layer.

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