MOS field effect transistor and method for manufacturing the sam

Details MOS field effect transistor and method for manufacturing the sam MOS field effect transistor and method for manufacturing the sam

1996-05-28

1997-12-16

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257408, 257410, 257900, H01L 2976, H01L 2994, H01L 31062, H01L 27088

Patent

active

056988834

ABSTRACT:
An MOS field effect transistor is of a lightly doped drain structure. In the transistor, an insulation layer is located on the side wall of a gate electrode. This insulation layer is formed of tantalum oxide, which has a high dielectric constant. Between this insulation layer and a drain region, another insulation layer is formed such that it has a thickness sufficiently greater than the length of the mean free path of the hot carriers which are generated in the vicinity of the drain region.

REFERENCES:
patent: 4638347 (1987-01-01), Iyer
patent: 4894694 (1990-01-01), Cham et al.
patent: 4935379 (1990-06-01), Toyoshima
patent: 4954867 (1990-09-01), Hosaka
American Institute of Physics Handbook by Gray et al., 1982, pp. 9-109 to 9-112.
Semiconductor Devices--Physics and Technology, S. M. Sze, Jan. 1985, p. 472.
Semiconductor Devices--Physics and Technology, S. M. Sze, Jan., 1985, p. 513, Appendix F, "Properties of Important Semiconductors at 300K".

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