4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Forming from vapor or gaseous state
  6. With decomposition of a precursor

Terence J. de Lyon

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Arsenic passivation for epitaxial deposition of ternary chalcoge

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
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Arsenic passivation for epitaxial deposition of ternary chalcoge

Metal treatment – Stock – Ferrous
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Growth of low dislocation density HGCDTE detector structures

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
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Method for epitaxial growth of twin-free, (111)-oriented II-VI a

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Method for temperature measurement of semiconducting substrates

Thermal measuring and testing – Temperature measurement – Nonelectrical – nonmagnetic – or nonmechanical temperature...
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