Method for epitaxial growth of twin-free, (111)-oriented II-VI a

Details Method for epitaxial growth of twin-free, (111)-oriented II-VI a Method for epitaxial growth of twin-free, (111)-oriented II-VI a

1996-03-14

2000-04-04

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117101, 117104, 117107, 117956, 257442, C30B 2518

Patent

active

060456140

ABSTRACT:
A method is provided for depositing a (111)-oriented heteroepitaxial II-VI alloy film on Si substrates. The (111)-oriented heteroepitaxial II-VI alloy film may comprise II-VI semiconductor and/or II-VI semimetal. As such, the method of the present invention provides a means for growing a (111)-oriented heteroepitaxial II-VI semiconductor film or a (111)-oriented heteroepitaxial II-VI semimetal film. The method of the present invention overcomes the inherent difficulties associated with forming (111)-oriented heteroepitaxial II-VI alloy films on Si(001). These difficulties include twin formation and poor crystalline quality. The novelty of the method of the present invention consists principally in choosing a Si substrate having a surface which has a specific Si crystallographic orientation. In particular, the present invention utilizes a Si surface having a crystallographic orientation near Si(111) rather than Si(001). The Si surface is vicinal Si(111). The angle of the misorientation of the Si surface from the Si(111) plane can range from 2.degree. to 8.degree..

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