Growth of low dislocation density HGCDTE detector structures

Details Growth of low dislocation density HGCDTE detector structures Growth of low dislocation density HGCDTE detector structures

1995-06-07

1998-04-21

Dutton, Brian

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

438 95, H01L 2100, H01L 3100

Patent

active

057420890

ABSTRACT:
An epitaxial structure and method of manufacture for a infrared detector device with low dislocation density, especially for high performance large area focal plane arrays. Preferably, the epitaxial structure includes a buffer layer comprising a Hg-based II-VI material and an overlayer comprising a detector comprising a Hg-based II-VI material. The buffer layer is transparent at the operating frequencies of the detector.

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